F. Cardone

Characterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen

R. M. Potemski, Thomas F. Kuech, Patricia M. Mooney, 1991 .

Doping concentration dependence of radiance and optical modulation bandwidth in carbon‐doped Ga0.51In0.49P/GaAs light‐emitting diodes grown by gas source molecular beam epitaxy

J. A. Kash, Peter D. Kirchner, D. T. McInturff, 1992 .

Novel in-situ doped polysilicon emitter process with buried diffusion source (BDS)

J.D. Cressler, F. Cardone, K.A. Jenkins, 1991, IEEE Electron Device Letters.

Film stress of sputtered W/C multilayers and strain relaxation upon annealing

R. M. Potemski, Thomas F. Kuech, Max G. Lagally, 1994 .

High-transconductance p-channel AlGaAs/GaAs HFETs with low-energy beryllium and fluorine co-implantation self-alignment

R. Kiehl, J. Yates, M. Tischler, 1991, IEEE Electron Device Letters.

Strained Si CMOS (SS CMOS) technology: Opportunities and challenges

Keith A. Jenkins, Byoung Hun Lee, P. Oldiges, 2003 .