T. Ohyanagi

1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb2Te3 super-lattice films

M. Tai, T. Morikawa, K. Akita, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations

T. Yamamoto, M. Tai, K. Kamiya, 2013, 2013 IEEE International Electron Devices Meeting.

Investigation of switching region in superlattice phase change memories

N. Takaura, T. Ohyanagi, 2016 .

Charge injection Super-lattice Phase Change Memory for low power and high density storage device applications

T. Yamamoto, M. Tai, K. Kamiya, 2013, 2013 Symposium on VLSI Technology.

A low power phase change memory using low thermal conductive doped-Ge2Sb2Te 5 with nano-crystalline structure

M. Tai, T. Morikawa, N. Takaura, 2012, 2012 International Electron Devices Meeting.