J.J. Chambers

Carrier mobility in MOSFETs fabricated with Hf-Si-O-N gate dielectric, polysilicon gate electrode, and self-aligned source and drain

L. Colombo, A.L.P. Rotondaro, M.R. Visokay, 2002, IEEE Electron Device Letters.

Impact of interfacial layer on low-frequency noise of HfSiON dielectric MOSFETs

Z. Celik-Butler, L. Colombo, Z. Çelik-Butler, 2006, IEEE Transactions on Electron Devices.

Characterization and comparison of the charge trapping in HfSiON and HfO/sub 2/ gate dielectrics

L. Colombo, A.L.P. Rotondaro, A. Shanware, 2003, IEEE International Electron Devices Meeting 2003.

Advanced CMOS transistors with a novel HfSiON gate dielectric

H. Bu, R. Khamankar, T. Grider, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

A new model for 1/f noise in high-κ MOSFETs

Hsing-Huang Tseng, Z. Celik-Butler, A. Zlotnicka, 2007, 2007 IEEE International Electron Devices Meeting.

Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/ and HfO/sub 2/

Y. Nishi, P. Majhi, L. Colombo, 2005, IEEE Electron Device Letters.