M. B. Santos

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

S. Koveshnikov, Vadim Tokranov, Serge Oktyabrsky, 2008 .

Voltage tunable quantum well infrared detector

Stephen Aplin Lyon, M. Shayegan, M. Santos, 1989 .

Growth of GaAs light modulators on Si by gas source molecular‐beam epitaxy for 850 nm optical interconnects

David A. B. Miller, Keith W. Goossen, J. A. Walker, 1994 .

Surface reconstructions of InSb(001) during molecular beam epitaxy

W. K. Liu, M. Santos, M. B. Santos, 1994 .

Suppression of phonon‐mediated hot carrier relaxation in type‐II InAs/AlAsxSb1 − x quantum wells: a practical route to hot carrier solar cells

S. Vijeyaragunathan, Department of PhysicsAstronomy, USA, 2015, 1511.00042.

Inas-based interband cascade lasers near 6 μm

Rui Q. Yang, Robert T. Hinkey, Tetsuya D. Mishima, 2009 .

Measurement of modulation saturation intensity in strain-balanced, undefected InGaAs/GaAsP modulators operating at 1.064 μm

Keith W. Goossen, John E. Cunningham, W. Y. Jan, 1993, Quantum Optoelectronics.

Reducing Rext in laser annealed enhancement-mode In0.53Ga0.47As surface channel n-MOSFET

P. Y. Hung, G. Bersuker, R. Jammy, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

Effects of localization on hot carriers in InAs/AlAsxSb1–x quantum wells

Tetsuya D. Mishima, Vincent R. Whiteside, Hamidreza Esmaielpour, 2015 .