F. Zhu

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

S. Koveshnikov, Vadim Tokranov, Serge Oktyabrsky, 2008 .

Hafnium-based high-k dielectrics

J.C. Lee, S. Krishnan, M. Akbar, 2005, IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..

Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer

Manhong Zhang, Injo Ok, S. Koveshnikov, 2006 .

Comparison of Plasma-Induced Damage in SIO2/TIN and HFO2/TIN Gate Stacks

J.C. Lee, G. Bersuker, B.H. Lee, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Self-Aligned n- and p-channel GaAs MOSFETs on Undoped and P-type Substrates Using HfO2 and Silicon Interface Passivation Layer

S. Koveshnikov, J.C. Lee, V. Tokranov, 2006, 2006 International Electron Devices Meeting.