J. D. Cohen

发表

A comparative study of defect states in evaporated and selenized CIGS(S) solar cells

J. Sites, K. Ramanathan, J. Heath, 2005 .

Polyaniline spinning solutions and fibers

C. Hsu, J. D. Cohen, C.-H. Hsu, 1993 .

Junction capacitance studies of deep defects in undoped hydrogenated amorphous silicon

K. Zellama, K. Zellama, A. Gelatos, 1988 .

The Effects of Hydrogen Profiling and of Light-Induced Degradation on the Electronic Properties of Hydrogenated Nanocrystalline Silicon

S. Guha, A. Halverson, B. Yan, 2005 .

Analysis of CuInxGa1−xSe2 solar cells using admittance spectroscopy under light bias

A. Rockett, J. D. Cohen, D. W. Miller, 2012, 2012 38th IEEE Photovoltaic Specialists Conference.

Effects of Light Induced Degradation on the Distribution of Deep Defects in Hydrogenated Amorphous Silicon-Germanium Alloys.

Changfeng Chen, J. D. Cohen, F. Zhong, 1996 .

Study of Large Area a-Si:H and nc-Si:H Based Multijunction Solar Cells and Materials

S. Guha, A. Banerjee, B. Yan, 2008 .

Electronic characterization and effects of light-induced degradation on hydrogenated nanocrystalline silicon

S. Guha, A. Halverson, Jeffrey Yang, 2006 .

Short-range compositional randomness of hydrogenated amorphous silicon–germanium films

E. Stern, S. Guha, G. Seidler, 2002 .

Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150 Å/s

R. Crandall, Y. Xu, A. Gallagher, 2001 .

Defect bands in a-Si–Ge:H alloys with low Ge content

S. Guha, Jeffrey Yang, J. D. Cohen, 2000 .

Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states

D. Lang, J. D. Cohen, J. David Cohen, 1982 .

Identification of the Dangling-Bond State within the Mobility Gap of a-Si: H by Depletion-Width-Modulated ESR Spectroscopy

K. Wecht, J. Harbison, J. D. Cohen, 1982 .

Direct Measurement of the Bulk Density of Gap States in n-Type Hydrogenated Amorphous Silicon

D. Lang, J. Harbison, J. D. Cohen, 1980 .

Photo-induced changes in the bulk density of gap states in hydrogenated amorphous silicon associated with the Staebler-Wronski effect☆

D. Lang, J. Harbison, J. D. Cohen, 1983 .

Insights and challenges toward understanding the electronic properties of hydrogenated nanocrystalline silicon

S. Guha, Jeffrey Yang, B. Yan, 2009 .

EVIDENCE FOR HOLE TRAPS AT THE AMORPHOUS SILICON/AMORPHOUS SILICON-GERMANIUM HETEROSTRUCTURE INTERFACE

S. Guha, Jeffrey Yang, U. Paschen, 1997 .

Capacitance Characterization of Amorphous Silicon/Amorphous Silicon Germanium Heterostructures

S. Guha, Jeffrey Yang, U. Paschen, 1996 .

Photocapacitance Studies Of Light Induced Changes in the Density of Gap States of N-Type Doped and Undoped Hydrogenated Amorphous Silicon Films

A. Gelatos, J. D. Cohen, 1988 .

Capacitance Studies of Metastable States in Light-Soaked, Quench-Cooled, and Bias-Annealed N-Type Hydrogenated Amorphous Silicon

A. Gelatos, J. D. Cohen, T. M. Leen, 1990 .

Lattice Relaxation of Deep Defects in Light-Soaked N-Type Hydrogenated Amorphous Silicon

J. D. Cohen, T. M. Leen, 1991 .

CAPACITANCE STUDIES OF METASTABLE DEFECT CREATION IN HYDROGENATED AMORPHOUS SILICON.

J. Harbison, A. Delahoy, K. Zellama, 1986 .

Capacitance studies of light induced effects in undoped a-Si:H

T. Walsh, K. Zellama, J. D. Cohen, 1985 .

Capacitance Studies of Light-Induced Effects in Undoped Hydrogenated Amorphous Silicon

J. Harbison, K. Zellama, J. D. Cohen, 1985 .

Observation of photoinduced changes in the bulk density of gap states in hydrogenated amorphous silicon

D. Lang, J. Harbison, J. D. Cohen, 1982 .

Chapter 2 Density of States from Junction Measurements in Hydrogenated Amorphous Silicon

J. D. Cohen, 1984 .

Material Properties of a-SiGe:H Solar Cells as a Function of Growth Rate

S. Guha, Jinwoo Lee, B. Yan, 2010 .

The Effect of Oxygen Contamination on the Electronic Properties of Hot-Wire CVD Amorphous Silicon Germanium Alloys

S. Golledge, H. Branz, A. Mahan, 2006 .

Effect Of Increasing Growth Rates on Film Properties and Device Performance for DC Glow Discharge Amorphous Silicon

J. Heath, G. Ganguly, J. Gutierrez, 2002 .

Electronic mobility gap structure and deep defects in amorphous silicon‐germanium alloys

T. Unold, C. Fortmann, J. D. Cohen, 1994 .

Electronic mobility gap structure and the nature of deep defects in amorphous silicon-germanium alloys grown by photo-CVD

T. Unold, J. D. Cohen, 1993 .

Effect of C Impurities in a-Si:H as Measured by Drive-Level Capacitance, Photo Current, and Electron Spin Resonance

T. Unold, J. D. Cohen, J. Hautala, 1993 .

Electronic properties of amorphous zinc tin oxide films by junction capacitance methods

J. Wager, P. Erslev, J. D. Cohen, 2008 .

Correlation of optical and thermal emission processes for bound‐to‐free transitions from mobility gap states in doped hydrogenerated amorphous silicon

J. Harbison, A. Gelatos, J. D. Cohen, 2008 .

Ambipolar Phototransport (μτ e = μτ h ) Observed as an Intrinsic Property of a-SiGe:H

W. Paul, Chih-Chiang Chen, J. D. Cohen, 1997 .

Band Tails and Thermal Disorder in Doped and Undoped Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys

L. Ley, J. D. Cohen, S. Aljishi, 1990 .

A melt process to superconductive fibres of Bi2Sr2CaCu2 oxide

C. Hsu, K. Lloyd, J. D. Cohen, 1995, Journal of Materials Science.

MICROSTRUCTURES AND PROPERTIES OF Y(1) BA(2)CU(3) OXIDE FIBERS

C. Hsu, K. Lloyd, J. D. Cohen, 1991 .

Study of Temperature and Light Bias Effects on the Occupied Near Surface Defect Density in Hydrogenated Amorphous Silicon

L. Ley, J. D. Cohen, S. Aljishi, 1990 .

Energy distribution and thermal broadening of band tail states in doped and undoped hydrogenated amorphous silicon

L. Ley, J. D. Cohen, S. Aljishi, 1989 .

Deep defect structure and carrier dynamics in amorphous silicon and silicon-germanium alloys determined by transient photocapacitance methods

T. Unold, C. Fortmann, A. Gelatos, 1992 .

Mapping out the distribution of electronic states in the mobility gap of amorphous zinc tin oxide

David Hong, Rick E. Presley, John F. Wager, 2009 .

Light-induced defects in hydrogenated amorphous silicon germanium alloys

J. D. Cohen, 2003 .

Metastable Defects in the Amorphous Silicon-Germanium Alloys

J. D. Cohen, 2003 .

Identification of the Dominant Electron Deep Trap in a-Si:H: A Critical Test of the Defect Pool vs . Defect Relaxation Pictures

D. Kwon, J. D. Cohen, 1997 .

Relaxation of the D center in amorphous silicon and how this accounts for the observed energy distributions of deep defects within the mobility gap

J. D. Cohen, F. Zhong, T. M. Leen, 1993 .

Defect Relaxation Dynamics in Amorphous Silicon

R. J. Rasmussen, J. D. Cohen, F. Zhong, 1993 .

Growth and properties of amorphous Ge:H solar cells

V. Dalal, J. Gutierrez, J. D. Cohen, 2004 .

High performance glow discharge a-Si1−xGex:H of large x

William Paul, Paul Wickboldt, Chih-Chiang Chen, 1997 .

Observation of electron and hole traps in hydrogenated amorphous silicon by voltage- and laser-excited deep level transient spectroscopy

D. Lang, J. Harbison, J. Bean, 1980 .

Density of states and carrier dynamics in amorphous silicon germanium alloys and amorphous germanium

T. Unold, C. Fortmann, J. D. Cohen, 1991 .

Drive‐level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films

J. Cohen, C. Michelson, A. Gelatos, 1985 .

Model calculation of NMR satellite data for iron-group atoms in copper

C. Slichter, J. D. Cohen, 1980 .

A theory relating NMR satellite data to the electronic structure of iron group atoms in copper

C. Slichter, J. D. Cohen, 1978 .

Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy

D. Lang, J. Harbison, J. Cohen, 1982 .

Theory Relating NMR Satellite Data to the Structure of Iron-Group Impurities in Copper

C. Slichter, J. D. Cohen, 1978 .

Bulk and metastable defects in CuIn1−xGaxSe2 thin films using drive-level capacitance profiling

W. Shafarman, J. Heath, J. Cohen, 2004 .

The determination of carrier mobilities in CIGS photovoltaic devices using high-frequency admittance measurements

Jinwoo Lee, W. Shafarman, J. Cohen, 2005 .

Optical response of deep defects as revealed by transient photocapacitance and photocurrent spectroscopy in CdTe/CdS solar cells

Jason W. Boucher, M. Lonergan, S. Boettcher, 2014 .

Photocapacitance Spectroscopy in Copper Indium Diselenide Alloys

W. Shafarman, J. Heath, J. Cohen, 2006 .

Effect of Ga content on defect states in CuIn 1¿x Ga x Se 2 photovoltaic devices

A. Rockett, W. Shafarman, J. Heath, 2002 .

Charge-Defect Thermodynamic Equilibrium and Metastable Defects in Amorphous Silicon

C. Fortmann, J. D. Cohen, 1992 .

Defect band distributions in hydrogenated tetrahedral amorphous carbon/crystalline silicon heterostructures

W. Milne, A. Ilie, J. D. Cohen, 2000 .

Capacitance studies of deep defects in hydrogenated amorphous silicon

J. D. Cohen, 1989 .

Is the DLTS Density of States for Amorphous Silicon Correct

D. Lang, J. D. Cohen, 1985 .

Resolution of the a-Si:H DLTS energy scale controversy

D. Lang, J. Harbison, J. D. Cohen, 1984 .

Electronic Properties of RF Glow Discharge Intrinsic Microcrystalline Silicon near the Amorphous Silicon Phase Boundary

S. Guha, A. Halverson, B. Yan, 2004 .

The influence of Na on metastable defect kinetics in CIGS materials

Jinwoo Lee, W. Shafarman, J. Cohen, 2009 .

Study of the Electronic Properties of Matched Na-Containing and Reduced-Na CuInGaSe 2 Samples Using Junction Capacitance Methods

A. Halverson, W. Shafarman, P. Erslev, 2007 .

Electronic properties of the Cu2ZnSn(Se,S)4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods

D. Mitzi, O. Gunawan, Jiang Tang, 2012 .

Observation of a Reversible Field-Induced Doping Effect in Hydrogenated Amorphous Silicon

D. Lang, J. Harbison, J. D. Cohen, 1982 .

Relationship of deep defects to oxygen and hydrogen content in nanocrystalline silicon photovoltaic materials

S. Guha, Jeffrey Yang, B. Yan, 2010 .

The effects of impurities on the light-induced degradation of hydrogenated amorphous silicon

T. Unold, J. D. Cohen, 1991 .

Enhancement of light‐induced degradation in hydrogenated amorphous silicon due to carbon impurities

T. Unold, J. D. Cohen, 1991 .

The carbon impurity dependence of light induced metastable effects in hydrogenated amorphous silicon

T. Unold, J. D. Cohen, 1989 .

Trace Impurities and Metastable States in a-Si:H

T. Unold, J. D. Cohen, 1990 .

Electrode interdependence and hole capacitance in capacitance–voltage characteristics of hydrogenated amorphous silicon thin-film transistor

D. Kwon, Hyuk-Ryeol Park, J. D. Cohen, 1998 .

The Electronic Properties of a-Si:H Deposited With Hydrogen or Helium Dilution

Chih-Chiang Chen, J. D. Cohen, W. Hong, 1996 .

A DLTS study of the gap states of amorphous Si1−xHx alloys

D. Lang, J. Harbison, J. Bean, 1980 .

ESR studies on a-Si:H : Evidence for charged defects and safe hole traps☆

J. D. Cohen, J. Hautala, 1993 .

Assessment of lattice relaxation effects in transitions from mobility gap states in hydrogenated amorphous silicon using transient photocapacitance techniques

J. Harbison, A. Gelatos, J. D. Cohen, 1986 .

Metastable properties of Cu(In1−xGax)Se2 with and without sodium

W. Shafarman, P. Erslev, J. D. Cohen, 2011 .

A contactless photoconductance technique for the identification of impact ionization

A. Rockett, J. Cohen, S. Kevan, 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).

Capacitance studies of ion-implanted n-type hydrogenated amorphous silicon

J. Harbison, C. Michelson, J. D. Cohen, 1987 .

Capacitance Studies of Ion-Implanted N-Type Hydrogenatfd Amdrphous Silicon

J. Harbison, C. Michelson, J. D. Cohen, 1987 .

The electronic structure of Cu(In 1 - x Ga x)Se 2 alloyed with silver

Jinwoo Lee, W. Shafarman, J. Cohen, 2011 .

Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity

S. Guha, Jeffrey Yang, D. L. Williamson, 1999 .

Electronically active defects in the Cu2ZnSn(Se,S)4 alloys as revealed by transient photocapacitance spectroscopy

D. Mitzi, O. Gunawan, T. Gokmen, 2012 .

Energetics of Both Minority and Majority Carrier Transitions through Deep Defects in Wide Bandgap Pentenary Cu(In,Ga)(Se,S) 2 Thin Film Solar Cells

S. Nishiwaki, A. Halverson, W. Shafarman, 2007 .

Band offsets and deep defect distribution in hydrogenated amorphous silicon‐crystalline silicon heterostructures

J. Essick, J. D. Cohen, 1989 .

Electronic Properties of Improved Amorphous Silicon-Germanium Alloys Deposited by a Low Temperature Hot Wire Chemical Vapor Deposition Process

A. Mahan, J. D. Cohen, Yueqing Xu, 2005 .

Capacitance studies of optical and thermal transitions from mobility gap states in hydrogenated amorphous silicon

A. Gelatos, J. D. Cohen, 1987 .

Correlation between deep defect states and device parameters in CuIn/sub 1-x/Ga/sub x/Se/sub 2/ photovoltaic devices

W. Shafarman, J. Heath, J. Cohen, 2002, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002..

Transient photocapacitance and photocurrent studies of undoped hydrogenated amorphous silicon

J. Harbison, A. Gelatos, J. D. Cohen, 1988 .

Defect Distributions and Carrier Properties in the Copper Indium Diselenide Alloys

W. Shafarman, J. Heath, J. D. Cohen, 2003 .

Observation of Configurational Switching of Deep Defects in a-Si:H Using Thermal Step Insertion During Capacitance Transient Measurements

J. D. Cohen, A. Gardner, 1996 .

New evidence for deep defect relaxation in hydrogenated amorphous silicon from junction capacitance methods

D. Kwon, J. D. Cohen, A. Gardner, 1996 .

Configurational Relaxation of the D Defect in Hydrogenated Amorphous Silicon as a Function of Fermi Energy

R. J. Rasmussen, J. D. Cohen, T. M. Leen, 1992 .

Band Offsets and Anomalous Deep Defect Distribution at the Hydrogenated Amorphous Silicon-Crystalline Silicon Interface via Junction Capacitance Techniques

J. Essick, J. D. Cohen, 1989 .

Investigation of Amorphous-Crystalline Silicon Interface Via Capacitance Techniques

J. Essick, J. D. Cohen, 1988 .

Junction Capacitance Studies of Hydrogenated Amorphous Silicon Doping Superiattice Films

J. Harbison, C. Michelson, J. D. Cohen, 1987 .

The Role of Lattice Relaxation in the Competition Between Optical and Thermal Transitions from Gap States in Hydroacenated Amorphous Silicon

J. Harbison, A. Gelatos, J. D. Cohen, 1987 .

Two-Step Capacitance Transients From an Oxygen Impurity Defect

H. Branz, J. D. Cohen, Yueqing Xu, 2008 .

Junction capacitance study of an oxygen impurity defect exhibiting configuration relaxation in amorphous silicon–germanium alloys deposited by hot-wire CVD

H. Branz, A. Mahan, J. D. Cohen, 2008 .

Synthesis of and Structure-Function Relationships in Heterostructures Of Quasi-2 D Materials

J. Cohen, S. Kevan, J. D. Cohen, 2002 .

New Infinities of Soft Charges

J. D. Cohen, 2021, 2112.09776.

Distinguishing metastable changes in bulk CIGS defect densities from interface effects

W. Shafarman, J. Heath, J. Cohen, 2003 .

Near-surface defect distributions in Cu(In,Ga)Se2

A. Rockett, Y. Strzhemechny, K. Ramanathan, 2003 .

Metastable Defect Studies in Hydrogen Modulated Multilayer Amorphous Silicon

D. Kwon, J. D. Cohen, 1994 .

High quality a-Si:H films grown at high deposition rates

J. Cohen, G. Ganguly, Y. Lubianiker, 1999 .

Characterizing the effects of silver alloying in chalcopyrite CIGS solar cells with junction capacitance methods

W. Shafarman, P. Erslev, J. D. Cohen, 2009 .

Defects in Copper Indium Aluminum Diselenide Films and their Impact on Photovoltaic Device Performance

W. Shafarman, J. Heath, J. Cohen, 2003 .

Electrical properties of a new amorphous molybdenum‐selenium semiconducting compound produced by the annealing of ultrathin multilayer composites

David C. Johnson, J. D. Cohen, L. Fister, 1994 .