Hiro Niimi

Controlled nitrogen incorporation at the gate oxide surface

G. Lucovsky, S. V. Hattangady, G. Lucovsky, 1995 .

Integrated processing of silicon oxynitride films by combined plasma and rapid‐thermal processing

G. Lucovsky, S. V. Hattangady, G. Lucovsky, 1996 .

The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics

J. E. Rowe, Gerald Lucovsky, J. W. Keister, 1999 .

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

Gerald Lucovsky, G. Lucovsky, H. Niimi, 1998 .