T. G. Zhu

发表

High-voltage GaN pin vertical rectifiers with 2 /spl mu/m thick i-layer

Russell D. Dupuis, M. M. Wong, Michael M. Wong, 2000 .

Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors

Milton Feng, Russell D. Dupuis, JianJang Huang, 2001 .

Back illuminated AlGaN solar-blind photodetectors

Joe C. Campbell, Russell D. Dupuis, C. J. Collins, 2000 .

High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching

Russell D. Dupuis, M. M. Wong, Michael M. Wong, 2000 .

High quantum efficiency AlGaN/GaN solar-blind photodetectors grown by metalorganic chemical vapor deposition

Joe C. Campbell, Russell D. Dupuis, A. L. Beck, 2001 .

Graded-emitter AlGaN/GaN heterojunction bipolar transistors

Milton Feng, Russell D. Dupuis, M. Hattendorf, 2000 .

AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition

Milton Feng, Russell D. Dupuis, JianJang Huang, 2000 .

Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

Milton Feng, Russell D. Dupuis, JianJang Huang, 2001 .