Soo Gil Kim

发表

A size-dependent nanoscale metal-insulator transition in random materials.

I-Wei Chen, Albert B. K. Chen, I. Chen, 2011, Nature nanotechnology.

Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays

Hyunsang Hwang, Seungjae Jung, Jubong Park, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Breakthrough of selector technology for cross-point 25-nm ReRAM

Donggyu Yim, Jae Yeon Lee, Sung-Joo Hong, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Deposition of ZnO thin films by magnetron sputtering for a film bulk acoustic resonator

Young Hwa Shin, Jae Bin Lee, Seong-Hyeon Hong, 2003 .

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

Tae Hyung Park, Cheol Seong Hwang, Suock Chung, 2015, Scientific Reports.

Low power switching of Si-doped Ta2O5 resistive random access memory for high density memory application

Hyeong-Soo Kim, S. Kim, Suock Chung, 2016 .

Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM

Jae Yeon Lee, Yoocharn Jeon, Suock Chung, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Effect of oblique sputtering on microstructural modification of ZnO thin films

Young-Jin Kim, Soo Gil Kim, Yong Eui Lee, 1997 .

Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability.

Tae Hyung Park, Cheol Seong Hwang, Byung Joon Choi, 2017, Nanoscale.

Effects of additives on properties of MgO thin films by electrostatic spray deposition

H. Kim, S. Kim, Soo Gil Kim, 2000 .

Fabrication of a Cu‐Cone‐Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2019, Advanced Functional Materials.