L. Gouskov

Be+ ion implantation in Ga0.96Al0.04Sb epitaxial layers

A. Perez, M. Pérotin, L. Gouskov, 1990 .

Passivation of GaSb by sulfur treatment

B. Lambert, B. Lambert, J. Bonnet, 1994 .

Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe

A. Gouskov, Jean Camassel, J. Camassel, 1982 .