Zhikai Tang

发表

Phase transition in confined Se nanoclusters

Zhikai Tang, I. Li, Irene L. Li, 2004 .

Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs

Shu Yang, Cheng Liu, Kevin J. Chen, 2015 .

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Shu Yang, Cheng Liu, Kevin J. Chen, 2015 .

Local silicon-gate carbon nanotube field effect transistors using silicon-on-insulator technology

Min Zhang, Philip C. H. Chan, Yang Chai, 2006 .

Biaxial stress-dependent optical band gap, crystalline, and electronic structure in wurtzite ZnO: Experimental and ab initio study

Yueguang Lu, Yongfeng Li, J. Y. Zhang, 2008 .

Radio-frequency characterization for the single-walled carbon nanotubes

Min Zhang, Philip C. H. Chan, Xiao Huo, 2006 .

Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

Shu Yang, Sen Huang, Qimeng Jiang, 2013, IEEE Electron Device Letters.

Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer

Shu Yang, Cheng Liu, Kevin J. Chen, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

Cheng Liu, Sen Huang, Qimeng Jiang, 2013, IEEE Electron Device Letters.

Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

Shu Yang, Xi Tang, Kevin J. Chen, 2015, IEEE Transactions on Electron Devices.

Self-assembled ZnO nano-crystals and exciton lasing at room temperature

Masashi Kawasaki, Akira Ohtomo, Hideomi Koinuma, 2006 .

Optical properties of organic dyes in nanoporous zeolite crystals

Xudong Xiao, Chunlei Yang, Irene L. Li, 2003 .

High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

Shu Yang, Cheng Liu, Kevin J. Chen, 2013, IEEE Electron Device Letters.

Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

Shu Yang, Kevin J. Chen, Qimeng Jiang, 2014, IEEE Transactions on Electron Devices.

Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components

Yan Wang, Mansun Chan, Kevin J. Chen, 2014, IEEE Transactions on Electron Devices.

Characterization of VT‐instability in enhancement‐mode Al2O3‐AlGaN/GaN MIS‐HEMTs

Shu Yang, Qimeng Jiang, Baikui Li, 2013 .

600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Shu Yang, Xi Tang, Kevin J. Chen, 2013, IEEE Electron Device Letters.

Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes

Shu Yang, Cheng Liu, Kevin J. Chen, 2014, 2014 IEEE International Electron Devices Meeting.