Tokuyuki Teraji

Control of interface states at metal/6H-SiC(0001) interfaces

Shiro Hara, S. Hara, T. Teraji, 2004 .

All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond.

Philip Hemmer, Mikhail D Lukin, Fedor Jelezko, 2014, Physical review letters.

Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces

Neil B. Manson, Junichi Isoya, Philipp Neumann, 2014, 1401.4106.

Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

Hiroshi Kawarada, Takashi Tanii, Evi Suaebah, 2017 .

Chemical vapor deposition of homoepitaxial diamond films

T. Teraji, Tokuyuki Teraji, 2006 .

IDEAL OHMIC CONTACT TO N-TYPE 6H-SIC BY REDUCTION OF SCHOTTKY BARRIER HEIGHT

Koji Kajimura, S. Hara, Hideyo Okushi, 1997 .