Carlo De Santi

发表

Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits

Gaudenzio Meneghesso, John E. Bowers, Enrico Zanoni, 2018, Microelectron. Reliab..

Failure causes and mechanisms of retrofit LED lamps

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2015, Microelectron. Reliab..

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Hervé Blanck, Enrico Zanoni, 2018, Microelectron. Reliab..

Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage

Gaudenzio Meneghesso, Enrico Zanoni, J. Wagner, 2014, Microelectron. Reliab..

Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016, Microelectron. Reliab..

Understanding the degradation processes of GaN based LEDs submitted to extremely high current density

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017, Microelectron. Reliab..

Degradation of InGaN-based LEDs related to charge diffusion and build-up

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016, Microelectron. Reliab..

Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2011, Microelectron. Reliab..

Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, Microelectron. Reliab..

Current induced degradation study on state of the art DUV LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2018, Microelectron. Reliab..

Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis

Gaudenzio Meneghesso, Eric E. Fabris, Enrico Zanoni, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes

Gaudenzio Meneghesso, Enrico Zanoni, Stefania Marconi, 2013, Microelectron. Reliab..

ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2014, Microelectron. Reliab..

Long-term degradation mechanisms of mid-power LEDs for lighting applications

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2015, Microelectron. Reliab..

Positive and negative threshold voltage instabilities in GaN-based transistors

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, Microelectron. Reliab..

Degradation of GaN-on-GaN vertical diodes submitted to high current stress

Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, 2018, Microelectron. Reliab..

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, Microelectron. Reliab..

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

Matteo Meneghini, Carlo De Santi, Enrico Zanoni, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016, Microelectron. Reliab..

Degradation of vertical GaN FETs under gate and drain stress

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Long-term degradation of InGaN-based laser diodes: Role of defects

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017, Microelectron. Reliab..

Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2015, Microelectron. Reliab..

Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, Microelectron. Reliab..

Degradation of InGaN-based MQW solar cells under 405 nm laser excitation

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017, Microelectron. Reliab..

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions

Peter Moens, Matteo Meneghini, Carlo De Santi, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Sven Einfeldt, 2017 .

Physical mechanisms limiting the performance and the reliability of GaN-based LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi, 2018 .