Kian-Ming Tan

发表

Achieving Conduction Band-Edge Schottky Barrier Height for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-Narrow Fin Widths

Guo-Qiang Lo, Ming Zhu, Yee-Chia Yeo, 2008, IEEE Electron Device Letters.

Ultra High-Stress Liner Comprising Diamond-Like Carbon for Performance Enhancement of p-Channel Multiple-Gate Transistors

Yee-Chia Yeo, Tsung-Yang Liow, Y. Yeo, 2009, IEEE Transactions on Electron Devices.

Probing the ErSi1.7 Phase Formation by Micro-Raman Spectroscopy

Yee-Chia Yeo, Tsung-Yang Liow, Ganesh S. Samudra, 2007 .

N-Channel (110)-Sidewall Strained FinFETs With Silicon–Carbon Source and Drain Stressors and Tensile Capping Layer

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2007, IEEE Electron Device Letters.

N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide

Guo-Qiang Lo, Yee-Chia Yeo, Tsung-Yang Liow, 2007, IEEE Electron Device Letters.

Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance

Yee-Chia Yeo, Tsung-Yang Liow, Y. Yeo, 2009, IEEE Electron Device Letters.

XPS studies on nitridation of InP(100) surface by ion beam bombardment

Andrew T. S. Wee, Jisheng Pan, A. Wee, 1996 .

Carrier Transport Characteristics of Sub-30 nm Strained N-Channel FinFETs Featuring Silicon-Carbon Source/Drain Regions and Methods for Further Performance Enhancement

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2006, 2006 International Electron Devices Meeting.

P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 - y}\hbox{Pt}_{y} \hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

Yee-Chia Yeo, Tsung-Yang Liow, Y. Yeo, 2008, IEEE Electron Device Letters.

Structural and mechanical degradation of polypyrrole films due to aqueous media and heat treatment and the subsequent redoping characteristics

Koon Gee Neoh, En-Tang Kang, K. Neoh, 1997 .

Strained p-Channel FinFETs With Extended $\Pi$ -Shaped Silicon–Germanium Source and Drain Stressors

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2007, IEEE Electron Device Letters.

A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

Ming Zhu, Yee-Chia Yeo, Tsung-Yang Liow, 2008, IEEE Electron Device Letters.

Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance

Guo-Qiang Lo, Yee-Chia Yeo, Tsung-Yang Liow, 2008, 2008 Symposium on VLSI Technology.

Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors

Ming Zhu, Yee-Chia Yeo, Tsung-Yang Liow, 2008, IEEE Electron Device Letters.

A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel GaAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack

Guo-Qiang Lo, Ming Zhu, Luping Shi, 2008, 2008 IEEE International Electron Devices Meeting.

Strained N-Channel FinFETs with 25 nm Gate Length and Silicon-Carbon Source/Drain Regions for Performance Enhancement

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Drive-Current Enhancement in FinFETs Using Gate-Induced Stress

Yee-Chia Yeo, Tsung-Yang Liow, Chih-Hang Tung, 2006, IEEE Electron Device Letters.

A New Liner Stressor with Very High Intrinsic Stress (≫ 6 GPa) and Low Permittivity Comprising Diamond-Like Carbon (DLC) for Strained P-Channel Transistors

Ming Zhu, Tsung-Yang Liow, N. Balasubramanian, 2007, 2007 IEEE International Electron Devices Meeting.