Thomas Hoffmann

发表

Layout Scaling of {Si}_{1-x}{Ge}_{x} {-Channel} pFETs

Jerome Mitard, Liesbeth Witters, C. Ortolland, 2011 .

Systematic study of shallow junction formation on germanium substrates

Geert Hellings, Eddy Simoen, Trudo Clarysse, 2011 .

A Fast and Accurate Method to Study the Impact of Interface Traps on Germanium MOS Performance

Geert Hellings, Marc Meuris, Geert Eneman, 2011, IEEE Transactions on Electron Devices.

High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2Gate Dielectric

Jerome Mitard, Jacopo Franco, Luigi Pantisano, 2011 .

The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures☆

Geert Hellings, Jerome Mitard, Niamh Waldron, 2012 .

Implant-Free SiGe Quantum Well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel

Geert Hellings, Jerome Mitard, Liesbeth Witters, 2010, 2010 International Electron Devices Meeting.

Roughness analysis of lithographically produced nanostructures: off-line measurement and scaling analysis

Angeliki Tserepi, Evangelos Gogolides, Grozdan Grozev, 2003 .

Mobility analysis of surface roughness scattering in FinFET devices

Gerard Ghibaudo, Mireille Mouis, Thomas Chiarella, 2011 .

Advanced FinFET Devices for Sub-32nm Technology Nodes: Characteristics and Integration Challenges

Rita Rooyackers, Anabela Veloso, Liesbeth Witters, 2009 .

Multi-Gate Fin Field-Effect Transistors Junctions Optimization by Conventional Ion Implantation for (Sub-)22 nm Technology Nodes Circuit Applications

Naoto Horiguchi, Anabela Veloso, An De Keersgieter, 2011 .

Migrating from planar to FinFET for further CMOS scaling: SOI or Bulk?

Rita Rooyackers, Liesbeth Witters, C. Ortolland, 2009, ESSDERC 2009.

(Invited) Electrical Characterization of Ge-pFETs with HfO2/TiN Metal Gate: Review of Possible Defects Impacting the Hole Mobility

Jerome Mitard, Marc Heyns, Marc Meuris, 2010 .