F. F. Morehead

Enhanced ‘‘tail’’ diffusion of phosphorus and boron in silicon: Self‐interstitial phenomena

R. F. Lever, F. Morehead, R. Lever, 1986 .

Rapid Annealing of Silicon

R. T. Hodgson, Vaughn R. Deline, V. Deline, 1983 .

Boron diffusion in silicon at high concentrations

R. F. Lever, F. Morehead, R. Glang, 1988 .

Shallow junctions by high‐dose As implants in Si: experiments and modeling

M. Y. Tsai, J. E. E. Baglin, A. E. Michel, 1980 .

On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon

Ulrich Gösele, F. Morehead, T. Tan, 1983 .

Diffusion of zinc in gallium arsenide: A new model

Ulrich Gösele, F. Morehead, U. Gösele, 1981 .