V. Hoel

AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

C. Gaquiere, D. Ducatteau, J.C. De Jaeger, 2004, IEEE Electron Device Letters.

Metamorphic In/sub 0.4/Al/sub 0.6/As/In/sub 0.4/Ga/sub 0.6/As HEMTs on GaAs substrate

A. Cappy, S. Lepilliet, H. Happy, 1999, IEEE Electron Device Letters.

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

S. Delage, C. Gaquiere, D. Ducatteau, 2006, IEEE Electron Device Letters.

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

M. Heuken, A. Vescan, H. Behmenburg, 2011, IEEE Electron Device Letters.

Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers

Y. Mancuso, G. Dambrine, S. Lepilliet, 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

AlGaN/GaN HEMT High Power Densities on $\hbox{SiC/} \hbox{SiO}_{2}$/poly-SiC Substrates

C. Gaquiere, Y. Douvry, J.C. De Jaeger, 2009, IEEE Electron Device Letters.

AlGaN/GaN HEMTs on epitaxies grown on composite substrate

C. Brylinski, H. Gerard, J.C. De Jaeger, 2007, 2007 European Microwave Integrated Circuit Conference.

Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates

Y. Douvry, M. Lesecq, Y. Cordier, 2013, IEEE Transactions on Electron Devices.

AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$

H. Maher, P. Frijlink, S. Bouzid-Driad, 2013, IEEE Electron Device Letters.

Metamorphic In/sub x/Al/sub 1-x/As/In/sub x/Ga/sub 1-x/As HEMTs on GaAs substrate: the influence of In composition

A. Cappy, S. Lepilliet, H. Happy, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).