H.W. Lam

Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

H. Shichijo, P.K. Chatterjee, S.D.S. Malhi, 1985, IEEE Transactions on Electron Devices.

A fully self-aligned stacked CMOS 64K SRAM

P.K. Chatterjee, S.D.S. Malhi, A.H. Shah, 1984, 1984 International Electron Devices Meeting.

p-Channel MOSFET's in LPCVD PolySilicon

H. Shichijo, P.K. Chatterjee, S.D.S. Malhi, 1983, IEEE Electron Device Letters.

SOI-CMOS 4K SRAM with high dose oxygen implanted substrate

S.D.S. Malhi, B.-Y. Mao, L.R. Hite, 1984, 1984 International Electron Devices Meeting.

Ring oscillators fabricated in laser-annealed silicon-on-insulator

T.C. Holloway, A. Tasch, J. Gibbons, 1980, IEEE Electron Device Letters.

Characteristics of MOSFETs fabricated in laser-recrystallized polysilicon islands with a retaining wall structure on an insulating substrate

T.C. Holloway, A. Tasch, T. Holloway, 1980, IEEE Electron Device Letters.

Novel SOI CMOS design using ultra thin near intrinsic substrate

S.D.S. Malhi, H.W. Lam, R.F. Pinizzotto, 1982, 1982 International Electron Devices Meeting.

Stacked CMOS SRAM cell

S.D.S. Malhi, H.W. Lam, C.-E. Chen, 1983, IEEE Electron Device Letters.