H.M. Nayfeh

Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs

S. Narasimha, G. Freeman, W. Rausch, 2009, IEEE Transactions on Electron Devices.

Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs

R. Hull, N. Klymko, J.L. Hoyt, 2004, IEEE Transactions on Electron Devices.

A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs

H. Nayfeh, D. Antoniadis, J. Hoyt, 2004, IEEE Transactions on Electron Devices.

High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL

J. Gill, D. Mocuta, D. Greenlaw, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Hole Transport in Nanoscale p-type MOSFET SOI Devices with High Strain

S. Narasimha, K. Tabakman, J.B. Johnson, 2007, 2007 65th Annual Device Research Conference.

Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs

J.L. Hoyt, H.M. Nayfeh, D.A. Antoniadis, 2003, IEEE Electron Device Letters.