S. Mo

High-quality In0.53Ga0.47As on exactly (001)-oriented Si grown by metal-organic vapour-phase epitaxy

H. Wehmann, A. Schlachetzki, E. Peiner, 1997 .

Dark-Current Analaysis of InGaAs-MSM-Photodetectors on Silicon Substrates

H. Wehmann, A. Schlachetzki, S. Mo, 1995, ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference.

Selected-area electron-channeling pattern as a characterization method for heteroepitaxial layers

E. Weber, A. Schlachetzki, E. Peiner, 1998 .

Stress-induced E0 photoreflectance spectra on GaAs/Si and InP/Si heterostructures

E. Peiner, J. Schreiber, S. Mo, 1995 .

Temperature dependence of residual stress in epitaxial GaAs/Si(100) films determined from photoreflectance spectroscopy data

A. Schlachetzki, E. Domashevskaya, E. Peiner, 2000 .

Strain-induced photoreflectance spectra in the vicinity of the E0 transition in GaAs/Si and InP/Si heterostructures

E. Domashevskaya, E. Peiner, J. Schreiber, 1999 .

Characterization of surface damage in dry-etched InP

A. Schlachetzki, E. Peiner, H. Iber, 1997 .