Xiaofan Cao

发表

GaN n- and p-type Schottky diodes: Effect of dry etch damage

Stephen J. Pearton, J. M. Van Hove, A. P. Zhang, 2000 .

Temporal evolution of the photorefractive effect in annealed proton-exchanged LiNbO 3 waveguides

Ramu V. Ramaswamy, Ramakant Srivastava, Takumi Fujiwara, 1992 .

Effect of waveguide uniformity on phase matching for frequency conversion in channel waveguides

Ramu V. Ramaswamy, Ramakant Srivastava, R. Ramaswamy, 1991 .

Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers

Stephen J. Pearton, N. B. Smirnov, A. V. Govorkov, 2000 .

GaN/AlGaN HBT fabrication

Albert G. Baca, R. F. Kopf, R. J. Shul, 2000 .

High breakdown voltage Au/Pt/GaN Schottky diodes

Stephen J. Pearton, Gou-Chung Chi, R. G. Wilson, 2000 .

High Current, Common‐Base GaN ‐ AIGaN Heterojunction Bipolar Transistors

S. J. Pearton, Andrew M. Wowchak, Peter P. Chow, 1999 .

Photorefractive effect in annealed proton‐exchanged LiNbO3 waveguides

Ramu V. Ramaswamy, Ramakant Srivastava, Takumi Fujiwara, 1992 .

Effect of N2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma

S. J. Pearton, Peter P. Chow, J. M. Van Hove, 2000 .

Temperature dependence of GaN high breakdown voltage diode rectifiers

Stephen J. Pearton, R. G. Wilson, Jen-Inn Chyi, 2000 .

W and WSix Ohmic contacts on p- and n-type GaN

S. J. Pearton, R. J. Shul, J. C. Zolper, 1999 .