H. Moriya

Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode

Y. Sasago, T. Mine, S. Hanzawa, 2006, 2009 Symposium on VLSI Technology.

Oxygen-doped gesbte phase-change memory cells featuring 1.5 V/100-/spl mu/A standard 0.13/spl mu/m CMOS operations

K. Osada, T. Kawahara, M. Moniwa, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention

A. Kotabe, M. Moniwa, S. Hanzawa, 2007, 2007 IEEE International Electron Devices Meeting.

Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories

M. Moniwa, S. Hanzawa, T. Iwasaki, 2006, 2006 International Electron Devices Meeting.