M.A. Pawlak

0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

S. Van Elshocht, B. Kaczer, H. Bender, 2008, 2008 IEEE International Electron Devices Meeting.

Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates

C. Vrancken, A. Veloso, S. Biesemans, 2006, IEEE Electron Device Letters.

Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineering

B. Kaczer, B. Govoreanu, H. Bender, 2010, 2010 International Electron Devices Meeting.

Scalability of Ni FUSI gate processes: phase and Vt control to 30 nm gate lengths

T. Chiarella, C. Vrancken, A. Veloso, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects

K. Maex, T. Janssens, K.G. Anil, 2006, IEEE Electron Device Letters.

Dual Work Function Phase Controlled Ni-FUSI CMOS (NiSi NMOS, Ni2Si or Ni31Si12 PMOS): Manufacturability, Reliability & Process Window Improvement by Sacrificial SiGe Cap

S. Locorotondo, H. Bender, T. Chiarella, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

CMOS integration of dual work function phase controlled Ni FUSI with simultaneous silicidation of NMOS (NiSi) and PMOS (Ni-rich silicide) gates on HfSiON

S. Locorotondo, T. Chiarella, C. Vrancken, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..