Jaechul Park

发表

180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications

U-In Chung, Hojung Kim, Sanghun Jeon, 2010, 2010 International Electron Devices Meeting.

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

Huaxiang Yin, Chang Jung Kim, Ihun Song, 2008, IEEE Transactions on Electron Devices.

Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by $\hbox{NH}_{3}$ Plasma Treatment

Changjung Kim, Eunha Lee, Huaxiang Yin, 2009, IEEE Electron Device Letters.

Extraction of Density of States in Amorphous GaInZnO Thin-Film Transistors by Combining an Optical Charge Pumping and Capacitance–Voltage Characteristics

Dong Myong Kim, Dae Hwan Kim, Chang Jung Kim, 2008, IEEE Electron Device Letters.

Density of States-Based DC $I$– $V$ Model of Amorphous Gallium–Indium–Zinc-Oxide Thin-Film Transistors

Dong Myong Kim, Dae Hwan Kim, Chang Jung Kim, 2009, IEEE Electron Device Letters.

Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors

Kee-Won Kwon, Changjung Kim, Eunha Lee, 2008, IEEE Electron Device Letters.

Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory

Eunha Lee, Huaxiang Yin, Chang Jung Kim, 2008, IEEE Electron Device Letters.

Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics

Dong Myong Kim, Sungwook Park, Dae Hwan Kim, 2010, IEEE Electron Device Letters.

High performance low voltage amorphous oxide TFT Enhancement/Depletion inverter through uni-/bi-layer channel hybrid integration

Sanghun Jeon, Huaxiang Yin, Chang Jung Kim, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)

U-In Chung, Dong Myong Kim, Dae Hwan Kim, 2010, IEEE Transactions on Electron Devices.