M. Nanba

High concentration antimony diffusion into silicon using auxiliary wafers

K. Usami, M. Nanba, M. Nanba, 1981 .

A 64-GHz f/sub T/ and 3.6-V BV/sub CEO/ Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts

M. Tanabe, Y. Tamaki, Takashi Kobayashi, 1993 .

A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology

Tokuo Kure, M. Tanabe, S. Iijima, 1991, International Electron Devices Meeting 1991 [Technical Digest].