R. Ferguson

A high performance 0.13 /spl mu/m SOI CMOS technology with a 70 nm silicon film and with a second generation low-k Cu BEOL

G. Biery, S. Narasimha, J. Adkisson, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

A high performance 90nm SOI technology with 0.992 /spl mu/m2 6T-SRAM cell

S. Narasimha, A. Gabor, W. Rausch, 2002, Digest. International Electron Devices Meeting,.

A high performance 0.13 /spl mu/m SOI CMOS technology with Cu interconnects and low-k BEOL dielectric

S. Narasimha, J. Adkisson, E. Maciejewski, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).