Sungchul Kim

Empirical Modeling and Extraction of Parasitic Resistance in Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors

Dong Myong Kim, Dae Hwan Kim, Jun-Hyun Park, 2011, IEEE Transactions on Electron Devices.

Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors

Dong Myong Kim, Dae Hwan Kim, Chang Jung Kim, 2010 .

Physical Parameter-Based SPICE Models for InGaZnO Thin-Film Transistors Applicable to Process Optimization and Robust Circuit Design

Dong Myong Kim, Hyuck-In Kwon, Yun Seop Yu, 2012, IEEE Electron Device Letters.

The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors

Dong Myong Kim, Dae Hwan Kim, Yong Woo Jeon, 2011, IEEE Electron Device Letters.

Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics

Dong Myong Kim, Sungwook Park, Dae Hwan Kim, 2010, IEEE Electron Device Letters.

Extraction of Subgap Donor States in a-IGZO TFTs by Generation–Recombination Current Spectroscopy

Dong Myong Kim, Dae Hwan Kim, D. M. Kim, 2011, IEEE Electron Device Letters.

Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)

U-In Chung, Dong Myong Kim, Dae Hwan Kim, 2010, IEEE Transactions on Electron Devices.