Akihisa Matsuda

发表

Fundamental aspects of low-temperature growth of microcrystalline silicon

Hiroyuki Fujiwara, Michio Kondo, H. Fujiwara, 2003 .

Chemical-reaction dependence of plasma parameter in reactive silane plasma

Madoka Takai, Michio Kondo, M. Takai, 2001 .

High-rate growth of stable a-Si:H

Michio Kondo, Ryo Hayashi, A. Payne, 1999 .

High rate growth of microcrystalline silicon using a high-pressure depletion method with VHF plasma

Susumu Suzuki, Michio Kondo, Lihui Guo, 2001 .

ANNEALING STUDIES ON LOW OPTICAL ABSORPTION OF GD a-Si:H USING PHOTOACOUSTIC SPECTROSCOPY

Nobuhiro Hata, Hideyo Okushi, Satoshi Yamasaki, 1981 .

Control of plasma chemistry for preparing highly stabilized amorphous silicon at high growth rate

Madoka Takai, Michio Kondo, M. Takai, 2003 .

Thin-Film Silicon –Growth Process and Solar Cell Application–

A. Matsuda, Akihisa Matsuda, 2004 .

Effects of Substrate Surface Morphology on Microcrystalline Silicon Solar Cells

Michio Kondo, A. Matsuda, M. Kondo, 2001 .

EXPERIMENTAL EVIDENCE FOR NEGATIVE CORRELATION ENERGY AND VALENCE ALTERNATION IN AMORPHOUS SELENIUM

Hiroyuki Oyanagi, A. Kolobov, K. Tanaka, 1997 .

Importance of Starting Procedure for Film Growth in Substrate-Type Microcrystalline-Silicon Solar Cells

Hiroaki Okamoto, Akihisa Matsuda, Jakapan Chantana, 2011 .

Dark current transport mechanism of p‐i‐n hydrogenated amorphous silicon diodes

Hideyo Okushi, Hideharu Matsuura, H. Okushi, 1985 .

Amorphous silicon solar cells deposited at high growth rate

Madoka Takai, Michio Kondo, M. Takai, 2002 .

Novel aspects in thin film silicon solar cells-amorphous, microcrystalline and nanocrystalline silicon

Michio Kondo, A. Matsuda, M. Kondo, 2004 .