Y. Wu

InGaAs/InP DHBTs With 120-nm Collector Having Simultaneously High , GHz

Mark J. W. Rodwell, Zach Griffith, J. M. Fastenau, 2005 .

Monolithic integration of InP-based transistors on Si substrates using MBE

T. E. Kazior, Bobby Brar, Dmitri Lubyshev, 2009 .

InGaAs-InP mesa DHBTs with simultaneously high f/sub /spl tau// and f/sub max/ and low C/sub cb//I/sub c/ ratio

Z. Griffith, M. Urteaga, D. Lubyshev, 2004, IEEE Electron Device Letters.

1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance

Vibhor Jain, J. M. Fastenau, Miguel Urteaga, 2011, 69th Device Research Conference.

InGaAs/InP DHBTs with emitter and base defined through electron‐beam lithography for reduced Ccb and increased RF cut‐off frequency

Mark J. W. Rodwell, Brian Thibeault, Vibhor Jain, 2013 .

InGaAs-InP Mesa DHBTs With Simultaneously High and and Low Ratio

Mark J. W. Rodwell, J. M. Fastenau, Dmitri Lubyshev, 2004 .

InP/InGaAs/InP double heterojunction bipolar transistors with 300 GHz F/sub max/

M. Urteaga, S. Krishnan, D. Lubyshev, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing

Boon S. Ooi, Hery Susanto Djie, Gerard Dang, 2007 .

Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications

Dmitri Lubyshev, Sara Bals, Joel M. Fastenau, 2004 .