Kenji Kurishima

发表

High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)

Eiichi Sano, Shoji Yamahata, Kenji Kurishima, 1999 .

A 45-mW 50-Gb/s Linear Shunt LD Driver in 0.5-µm InP HBT Technology

Munehiko Nagatani, Hideyuki Nosaka, Hiroshi Yamazaki, 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

An InP-Based 27-GHz-Bandwidth Limiting TIA IC Designed to Suppress Undershoot and Ringing in Its Output Waveform

Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, 2016, IEICE Trans. Electron..

75 GBd InP-HBT MUX-DAC module for high-symbol-rate optical transmission

Munehiko Nagatani, Hideyuki Nosaka, Yutaka Miyamoto, 2015 .

Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors

Takashi Kobayashi, Yutaka Matsuoka, Shoji Yamahata, 1995 .

Recent progress in 40- To 100-Gbit/s-class optical communications ICS using InP-based HBT technologies

Hideyuki Nosaka, Kimikazu Sano, K. Ishii, 2005 .

3.21 ps ECL gate using InP/InGaAs DHBT technology

Hideyuki Nosaka, K. Ishii, Kenji Kurishima, 2003 .

Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity

Kenji Kurishima, Minoru Ida, Yoshino K. Fukai, 2012, IEICE Trans. Electron..

A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation

Hideyuki Nosaka, Kimikazu Sano, Masahiro Muraguchi, 2005, IEICE Trans. Electron..

Ultra-high-speed InP-based heterostructure device technology: InP-based HFETs and HBTs : Ultra-high-speed compound semiconductor ICs

Shoji Yamahata, Takatomo Enoki, Kenji Kurishima, 1996 .

Driving device for a task bar on a transfer press.

Toshihiko Arai, Kenji Kurishima, Susumu Oba, 1986 .

Low-power 1:16 DEMUX and one-chip CDR with 1:4 DEMUX using InP-InGaAs heterojunction bipolar transistors

Hideyuki Nosaka, Eiichi Sano, Takatomo Enoki, 2002 .

C-10-4 InP HBT 50-Gbit/s 1 : 4 Demultiplexer IC with Multiphase Clock Architecture

Kimikazu Sano, Michihiro Hirata, Koichi Murata, 2004 .

Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft

Shoji Yamahata, Kenji Kurishima, Yoshino K. Fukai, 2008, IEICE Trans. Electron..

Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage

Hideaki Matsuzaki, Takuya Hoshi, Kenji Kurishima, 2016, IEICE Trans. Electron..

90 Gbit/s 0.5 W decision circuit using InP/InGaAs double heterojunction bipolar transistors

Kimikazu Sano, Koichi Murata, K. Ishii, 1996 .

Low-power 50 Gbit/s InP HBT 1:4 demultiplexer IC with multiphase clock architecture

Kimikazu Sano, Michihiro Hirata, Shoji Yamahata, 2003 .

Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal

Shoji Yamahata, Takatomo Enoki, Kenji Kurishima, 2009, Microelectron. Reliab..

Electrical PMD Equalizer ICs for 40-Gbit/s Optical Transmissions

Hideyuki Nosaka, Masami Tokumitsu, Makoto Nakamura, 2004 .

Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors

Takashi Kobayashi, Yutaka Matsuoka, Shoji Yamahata, 1995 .

80 GHz electrical clock extraction from 80 Gbit/s RZ optical data stream using direct optical injection locking of InP/InGaAs HPT oscillator

Kimikazu Sano, Kenji Kurishima, Minoru Ida, 2004 .

Generation of dual-carrier QPSK signals with mixed electronics-optics modulator

Munehiko Nagatani, Hideyuki Nosaka, Koichi Murata, 2013 .

InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz fmax and 5.4-V breakdown voltage

Hideaki Matsuzaki, Takuya Hoshi, Yuta Shiratori, 2019, IEICE Electron. Express.

High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

Shoji Yamahata, Kenji Kurishima, Yasuyuki Miyamoto, 2007 .

A 56-Gb/s PAM4 InP HBT Driver IC Compensating for Nonlinearity of Extinction Curve of EAM

Munehiko Nagatani, Hideyuki Nosaka, Hiroshi Yamazaki, 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

A low-power wideband InP-HBT 27-1 PRBS generator

Munehiko Nagatani, Kimikazu Sano, Koichi Murata, 2012, IEICE Electron. Express.

4-bit multiplexer/demultiplexer chip set for 40-Gbit/s optical communication systems

Hideyuki Nosaka, Shoji Yamahata, Takatomo Enoki, 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.

High fmax carbon-doped base InP/InGaAs heterojunction bipolar transistors grown by MOCVD

Hiroshi Ito, Shoji Yamahata, Naoteru Shigekawa, 1996 .

Over 450-GHz ft and fmax InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO2 Sidewall Spacers

Hideaki Matsuzaki, Kenji Kurishima, Minoru Ida, 2014, IEEE Transactions on Electron Devices.

C-doped GaAsSb base HBT without hydrogen passivation grown by MOVPE

Kenji Kurishima, Noriyuki Watanabe, Yasuhiro Oda, 2004 .

Characteristics of InP/InGaAs HPT-based Optically Injection-Locked Self-oscillating Optoelectronic Mixers and Their Influence on RoF System Performance

Woo-Young Choi, Hideki Kamitsuna, Kenji Kurishima, 2006 .

Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter

Kenji Kurishima, Noriyuki Watanabe, Haruki Yokoyama, 2005 .

MOCVD-grown compressively strained C-doped InxGa1−xAs1−ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs

Hideaki Matsuzaki, Takuya Hoshi, Hiroki Sugiyama, 2014 .

Composition- and Doping-Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors Exhibiting Simultaneous \(f_{t}\) and \(f_{\textrm {max}}\) of Over 500 GHz

Hideaki Matsuzaki, Takuya Hoshi, Kenji Kurishima, 2014, IEEE Electron Device Letters.

Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition

Hiroshi Ito, Shoji Yamahata, Naoteru Shigekawa, 1996 .

Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation

Hiroshi Ito, Shoji Yamahata, Kenji Kurishima, 1998 .

Radio-on-fiber downlink transmission systems based on optically controlled InP/InGaAs HPT oscillators

Woo-Young Choi, Jun-Hyuk Seo, Hideki Kamitsuna, 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors

Tadao Ishibashi, Kenji Kurishima, Hiroki Nakajima, 1994 .

Over 40 Gbit/s 16:1 multiplexer IC using InP/InGaAs HBT technology

Hideyuki Nosaka, Shoji Yamahata, Takatomo Enoki, 2003 .

Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer

Hideaki Matsuzaki, Takuya Hoshi, Kenji Kurishima, 2015, IEEE Electron Device Letters.

Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors

Koichi Murata, Takatomo Enoki, Kenji Kurishima, 2002 .

Highly reliable InP-based HBTs with a ledge structure operating at high current density

Shoji Yamahata, Takatomo Enoki, Kenji Kurishima, 2007 .

4-bit multiplexer/demultiplexer chip set for 40-Gbit/s optical communication systems

Hideyuki Nosaka, Shoji Yamahata, Takatomo Enoki, 2003, RFIC 2003.

Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation

Hiroshi Ito, Shoji Yamahata, Kenji Kurishima, 1996 .

Direct optical injection locking of InP/InGaAs HPT oscillator ICs for microwave photonics and 40-Gbit/s-class, optoelectronic clock recovery

Kenji Kurishima, Minoru Ida, H. Kamitsuna, 2002 .

Enhancement of f/sub max/ in InP/InGaAs HBTs by selective MOCVD growth of heavily-doped extrinsic base regions

Hiroshi Ito, Shoji Yamahata, Kenji Kurishima, 1996 .

Undoped-emitter InP/InGaAs HBTs for high-speed and low-power applications

Shoji Yamahata, Kenji Kurishima, Hiroki Nakajima, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Ultra-high f/sub max/ and f/sub T/ InP/InGaAs double-heterojunction bipolar transistors with step-graded InGaAsP collector

Kenji Kurishima, Hiroki Nakajima, S. Yamahata, 1994, Proceedings of 1994 IEEE GaAs IC Symposium.

Effects of a Compositionally-Graded InxGa1-xAs Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors

Shoji Yamahata, Kenji Kurishima, Hiroki Nakajima, 1995 .

Photo-patternable optical chemical sensors based on hybrid sol-gel materials

Hideyuki Nosaka, Michihiro Hirata, Shoji Yamahata, 2003 .