A. G. Kuzmenkov

发表

Multi-mode to single-mode switching caused by self-heating in bottom-emitting intra-cavity contacted 960 nm VCSELs

Nikolai N. Ledentsov, Andrey G. Gladyshev, James A. Lott, 2012, Photonics West - Optoelectronic Materials and Devices.

Impact of a large negative gain-to-cavity wavelength detuning on the performance of InGaAlAs oxide-confined vertical-cavity surface-emitting lasers

James A. Lott, Philip Moser, Dieter Bimberg, 2015, Photonics West - Optoelectronic Materials and Devices.

850 nm optical components for 25 Gb/s optical fiber data communication links over 100 m at 85°C

D. Bimberg, J. A. Lott, A. G. Kuzmenkov, 2011, 2011 Asia Communications and Photonics Conference and Exhibition (ACP).

High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

A. G. Kuzmenkov, M. A. Bobrov, V. Ustinov, 2018 .

Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

A. G. Kuzmenkov, A. R. Kovsh, S. Mikhrin, 2006, IEEE Journal of Quantum Electronics.

Quantum dot semiconductor disk laser at 1.3 μm.

A. G. Kuzmenkov, A. P. Vasil’ev, M. A. Bobrov, 2015, Optics letters.

Anomalous lasing of high-speed 850 nm InGaAlAs oxide-confined vertical-cavity surface-emitting lasers with a large negative gain-to-cavity wavelength detuning

James A. Lott, Philip Moser, A. G. Kuzmenkov, 2014 .

The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2007 .

Anomalous lasing in VCSEL with double oxide current apertures

A. G. Kuzmenkov, M. A. Bobrov, V. Ustinov, 2019 .

Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture

A. G. Kuzmenkov, A. P. Vasil’ev, M. A. Bobrov, 2016 .

The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology

A. G. Kuzmenkov, A. P. Vasil’ev, M. A. Bobrov, 2020 .

Effect of saturable absorber in 1.5 μm wafer-fused vertical cavity surface-emitting lasers

A. G. Kuzmenkov, M. A. Bobrov, A. Gladyshev, 2020 .

Mechanism of the polarization control in intracavity- contacted VCSEL with rhomboidal oxide current aperture

A. G. Kuzmenkov, A. P. Vasil’ev, M. A. Bobrov, 2016 .

Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning

A. G. Kuzmenkov, M. A. Bobrov, P. Moser, 2015 .

Self-sustained pulsation in the oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

A. R. Kovsh, Wilson Sibbett, A. G. Kuzmenkov, 2007 .

Reliability performance of 25 Gbit s−1 850 nm vertical-cavity surface-emitting lasers

James A. Lott, N. N. Ledentsov, A. G. Kuzmenkov, 2013 .

Heterobarrier Varactors with Nonuniformly Doped Modulation Layers

A. G. Kuzmenkov, A. P. Vasil’ev, M. A. Bobrov, 2019, Technical Physics Letters.

Single-Lobe Single-Wavelength Lasing in Ultrabroad-Area Vertical-Cavity Surface-Emitting Lasers Based on the Integrated Filter Concept

A. G. Kuzmenkov, N. Ledentsov, S. Mikhrin, 2008, IEEE Journal of Quantum Electronics.

Design optimization for bright electrically-driven quantum dot single-photon sources emitting in telecom O-band.

A. G. Kuzmenkov, A. P. Vasil’ev, M. A. Bobrov, 2021, Optics express.

Demultiplexed single-photon source with a quantum dot coupled to microresonator

A. G. Kuzmenkov, M. Kulagina, S. Straupe, 2022, Journal of Luminescence.

Design of electrically driven single photon source based on dielectric passive cavity structure at 1.3 μm

A. G. Kuzmenkov, M. A. Bobrov, N. Ledentsov, 2020, Journal of Physics: Conference Series.

Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers

A. G. Kuzmenkov, A. Gladyshev, V. Ustinov, 2019, Semiconductors.

Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique

A. G. Kuzmenkov, A. Gladyshev, V. Ustinov, 2019, Optics and Spectroscopy.

Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells

A. G. Kuzmenkov, A. P. Vasil’ev, N. Ledentsov, 2018 .

Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture

A. G. Kuzmenkov, E. Nikitina, V. Ustinov, 2014 .

Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission

A. G. Kuzmenkov, D. Bimberg, V. Ustinov, 2014 .

Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers

A. G. Kuzmenkov, V. V. Stetsenko, V. Ustinov, 2013 .

Matrices of 960-nm vertical-cavity surface-emitting lasers

A. G. Kuzmenkov, A. S. Shulenkov, J. Lott, 2011 .

15 mW of continuous wave single transverse mode output power from planar 960 nm bottom-emitting VCSELs with multiple tapered oxide layers

A. G. Kuzmenkov, J. Lott, N. Ledentsov, 2010, 22nd IEEE International Semiconductor Laser Conference.

The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

A. G. Kuzmenkov, A. R. Kovsh, S. Mikhrin, 2007, IEEE Journal of Quantum Electronics.

Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures

A. G. Kuzmenkov, A. Gladyshev, N. Maleev, 2011 .

InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics

A. G. Kuzmenkov, A. P. Vasil’ev, V. Ustinov, 2019, Technical Physics Letters.