B. T. Dermott

GaN based heterostructure for high power devices

Michael S. Shur, Lester F. Eastman, Jinwook Burm, 1997 .

Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency

Michael S. Shur, Lester F. Eastman, Jinwook Burm, 1996 .

CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz

M. Asif Khan, M. Shur, L. Eastman, 1996, IEEE Electron Device Letters.

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

M.A. Khan, M. Shur, J. Yang, 1996, IEEE Electron Device Letters.