Tsutomu Araki

High-Sensitivity Ozone Sensing Using 280 nm Deep Ultraviolet Light-Emitting Diode for Detection of Natural Hazard Ozone

Yumi Ahiko, Hirotaka Nakamura, Masahito Kurouchi, 2012 .

Correlation between the leakage current and the thickness of GaN‐layer of AlGaN/GaN‐HFET

Tomoyuki Yamada, Tadayoshi Tsuchiya, Akihiro Hinoki, 2007 .

Marked enhancement of 320–360 nm ultraviolet emission in quaternary InxAlyGa1−x−yN with In-segregation effect

Atsuhiro Kinoshita, Akira Hirata, Yoshinobu Aoyagi, 2002 .

Optical Properties of InxGa1—xN with Entire Alloy Composition on InN Buffer Layer Grown by RF‐MBE

Yoshiki Saito, Tomohiro Yamaguchi, Yasushi Nanishi, 2002 .

Growth and properties of In‐rich InGaN films grown on (0001) sapphire by RF‐MBE

Masahito Kurouchi, Tomohiro Yamaguchi, Yasushi Nanishi, 2004 .