C. Butler

92–96 GHz GaN power amplifiers

A. Margomenos, A. Kurdoghlian, P. J. Willadsen, 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

A. Schmitz, K. Shinohara, M. Micovic, 2011, 2011 International Electron Devices Meeting.

Deeply-Scaled E/D-Mode GaN-HEMTs for Sub-mm-Wave Amplifiers and Mixed-Signal Applications

P. M. Asbeck, A. Schmitz, K. Shinohara, 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE

A. Kurdoghlian, K. Shinohara, M. Micovic, 2011, 2011 International Electron Devices Meeting.

Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm $g_{m}$ and 112-GHz $f_{T}$

Adele E. Schmitz, Keisuke Shinohara, Andrea Corrion, 2010 .

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz

P. M. Asbeck, P. J. Willadsen, A. Schmitz, 2011, IEEE Electron Device Letters.

220GHz fT and 400GHz fmax in 40-nm GaN DH-HEMTs with re-grown ohmic

A. Fung, D. Wheeler, P. J. Willadsen, 2010, 2010 International Electron Devices Meeting.

Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2‐BCl3 digital etching technique

Karim S. Boutros, Miroslav Micovic, D. Wong, 2010 .