B. Heying

发表

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

James S. Speck, Henning Riechert, J. Speck, 2000 .

Impact of A1N Interalayer on Reliability of AlGaN/GaN HEMTS

Y.C. Chen, Y.C. Chou, I. Smorchkova, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

HIGH MOBILITY TWO-DIMENSIONAL ELECTRON GAS IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1999 .

Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1996 .

Exfoliation of GaN layers using hydrogen implantation

Mark S. Goorsky, B. Poust, B. Heying, 2003, 2003 International Symposium on Compound Semiconductors.

POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

James S. Speck, Umesh K. Mishra, R. Vetury, 1999 .

A V-Band Monolithic AlGaN/GaN VCO

M. Kintis, Y.C. Chen, I. Smorchkova, 2008, IEEE Microwave and Wireless Components Letters.

Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure

Christiane Poblenz, James S. Speck, William C. Mitchel, 2000 .

Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

James S. Speck, Umesh K. Mishra, Sarah L. Keller, 2000 .

Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

Christiane Poblenz, James S. Speck, Umesh K. Mishra, 2000 .

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

James S. Speck, Bernd Keller, Yongfang Li, 1996 .

Dislocation mediated surface morphology of GaN

James S. Speck, S. P. DenBaars, S. Denbaars, 1999 .

Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2002 .

Gallium nitride materials - progress, status, and potential roadblocks

Jaime A. Freitas, Robert F. Davis, James S. Speck, 2002, Proc. IEEE.

Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers

D. Yamauchi, M. Siddiqui, Y.C. Chen, 2009, IEEE Transactions on Microwave Theory and Techniques.

Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN

U. K. Mishra, J. S. Speck, S. Keller, 1995 .

Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

James S. Speck, Richard J. Molnar, Julia W. P. Hsu, 2002 .

Capture Kinetics of Electron Traps in MBE‐Grown n‐GaN

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2001 .

Temperature and Voltage Dependent RF Degradation Study in Algan/gan HEMTs

M. Wojtowicz, A. Oki, R. Coffie, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1995 .

Optimization of AlGaN/GaN HEMT Ohmic Contacts for Improved Surface Morphology with Low Contact Resistance

M. Barsky, J. Uyeda, R. Lai, 2010 .

Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1996 .