D. Z. Garbuzov

Temperature dependence of continuous wave threshold current for 2.3–2.6 μm InGaAsSb/AlGaAsSb separate confinement heterostructure quantum well semiconductor diode lasers

Hao Lee, Ramon U. Martinelli, John C. Connolly, 1999 .

2.7‐μm InGaAsSb/AlGaAsSb laser diodes with continuous‐wave operation up to −39 °C

Hao Lee, Ramon U. Martinelli, John C. Connolly, 1995 .

4 Watt, high efficient, 0.81-/spl mu/m SQW GRIN-SCH AlGaAs/GaAs laser diodes with broadened waveguide

John C. Connolly, Joseph H. Abeles, D. Z. Garbuzov, 1996, Summaries of papers presented at the Conference on Lasers and Electro-Optics.

Generation of electrically wavelength tunable ( Delta lambda =40 nm) singlemode laser pulses from a 1.3 mu m Fabry-Perot laser by self-seeding in a fibre-optic configuration

Martin Schell, D. Bimberg, D. Huhse, 1994 .

218 W quasi-CW operation of 1.83 /spl mu/m two-dimensional laser diode array

John C. Connolly, Raymond J. Menna, M. Maiorov, 1999 .

High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers

D. Garbuzov, S. N. Zhigulin, A. V. Kochergin, 1991 .

Direct measurements of heterobarrier leakage current and modal gain in 2 . 3 pm double OW psubstrate InGaAsSb / AIGaAsSb broad area lasers

R. U. Martinelli, D. Z. Garbuzov, H. Lee, 2004 .

20 nm wavelength tunable single mode picosecond pulse generation at 1.3 mu m by self-seeded gain-switched semiconductor laser

Martin Schell, D. Bimberg, A. G. Weber, 1992 .

Minority-carrier transport in InGaAsSb thermophotovoltaic diodes

G. C. Taylor, Hao Lee, Ramon U. Martinelli, 1997 .