K. Okabe

High-Performance and Low-Power Bulk Logic Platform Utilizing FET Specific Multiple-Stressors with Highly Enhanced Strain and Full-Porous Low-k Interconnects for 45-nm CMOS Technology

T. Miyashita, Y. Sambonsugi, T. Sugii, 2007, 2007 IEEE International Electron Devices Meeting.

(110) NMOSFETs competitive to (001) NMOSFETs: Si migration to create (331) facet and ultra-shallow Al implantation after NiSi formation

S. Satoh, T. Yamamoto, H. Minakata, 2008, 2008 IEEE International Electron Devices Meeting.

High RF power transistor with laterally modulation-doped channel and self-aligned silicide in 45nm node CMOS technology

T. Suzuki, K. Joshin, Y. Kawano, 2008, 2008 IEEE International Electron Devices Meeting.