D. Tsvetanova

Thermally stable integrated Se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent endurance

L. Goux, B. Govoreanu, S. Kundu, 2017, 2017 Symposium on VLSI Technology.

Performance and reliability of high-mobility Si0.55Ge0.45 p-channel FinFETs based on epitaxial cladding of Si Fins

L. Witters, N. Collaert, H. Bender, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal

M. Badaroglu, L. Witters, D. Mocuta, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

C. Merckling, D. Lin, N. Waldron, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.