Jin-Cheng Zheng

An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory

Wei Zhang, Simon M. Sze, Ya-Chi Hung, 2015, IEEE Electron Device Letters.

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

Yi-Ting Tseng, Simon M. Sze, Kuan-Chang Chang, 2016, IEEE Electron Device Letters.

Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment

Simon M. Sze, Ya-Chi Hung, Kuan-Chang Chang, 2015, IEEE Electron Device Letters.

Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory

Simon M. Sze, Kuan-Chang Chang, Min-Chen Chen, 2017 .

Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid

Wei Zhang, Jung-Hui Chen, Yi-Ting Tseng, 2015, IEEE Electron Device Letters.

Physical and chemical mechanisms in oxide-based resistance random access memory

Yao-Feng Chang, Ya-Chi Hung, Kuan-Chang Chang, 2015, Nanoscale Research Letters.

Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

Jung-Hui Chen, Simon M. Sze, Kuan-Chang Chang, 2014, IEEE Electron Device Letters.