Baojian Xu

发表

Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

John W. Cockburn, M. S. Skolnick, Z. G. Wang, 2002 .

Thermal redistribution of photocarriers between bimodal quantum dots

Changbao Huang, Z. G. Wang, Yuzhi Zhang, 2001 .

Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots

Z. G. Wang, Huiyun Liu, Yuansha Chen, 2000 .

Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots

Z. G. Wang, Fengkui Liu, Zhiyong Zhang, 2004 .

Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer

Z. G. Wang, Baojian Xu, Z. Zhang, 2002 .

A novel application to quantum dot materials to the active region of superluminescent diodes

Ping Jin, Z. G. Wang, Shengchun Qu, 2002 .

The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing

Z. G. Wang, Baojian Xu, Bowei Xu, 2003 .