T. Vasen

Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

Rui Li, Soo Doo Chae, Qin Zhang, 2012, IEEE Electron Device Letters.

InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)

B. Duriez, I. Thayne, M. Passlack, 2013, 2013 IEEE International Electron Devices Meeting.

Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs

Huili Xing, Guangle Zhou, P. Fay, 2011, 69th Device Research Conference.

Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

Rui Li, Chen Chen, Qin Zhang, 2011, IEEE Electron Device Letters.

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$

P. Fay, Qin Zhang, A. Seabaugh, 2012, IEEE Electron Device Letters.