A. P. Karmarkar

Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence

Ronald D. Schrimpf, Daniel M. Fleetwood, Leonard J. Brillson, 2003 .

Aging and baking effects on the radiation hardness of MOS capacitors

Ronald D. Schrimpf, Daniel M. Fleetwood, peixiong zhao, 2001 .

Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

Umesh K. Mishra, Bongim Jun, Ronald D. Schrimpf, 2003 .