Y. Sano

发表

Sub-Quarter-Micron Gate Fabrication Process Using Phase-Shifting Mask for Microwave GaAs Devices

Yoshiaki Sano, Hideyuki Jinbo, Tadashi Saito, 1991 .

Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation

Yoshiaki Sano, Masahiro Akiyama, Takashi Egawa, 1984 .

Sub-Quarter Micron Gate Fabrication Process Using Phase-Shifting-Mask for Microwave GaAs Devices

Yoshiaki Sano, Hideyuki Jinbo, Tadashi Saito, 1991 .

Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

T. Egawa, K. Baskar, Y. Sano, 2005 .

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

T. Egawa, T. Jimbo, Tomoyuki Yamada, 2003 .

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

Takashi Jimbo, Yoshiaki Sano, Hiroyasu Ishikawa, 2004 .

Fabrication of AlGaN/GaN double‐insulator metal–oxide–semiconductor high‐electron‐mobility transistors using SiO2 and SiN as gate insulators

T. Egawa, K. Baskar, Y. Sano, 2005 .

A comparison on the Electrical Characteristics of SiO2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal–Oxide/Insulator–Semiconductor High-Electron Mobility-Transistors

T. Egawa, K. Baskar, Y. Sano, 2005 .

Sidegating Effects in Inverted AlGaAs/GaAs HEMT

S. Nishi, T. Saito, Y. Sano, 1988 .

Effect of Bias Sputtering on W and W-Al Schottky Contact Formation and its Application to GaAs MESFETs

M. Sakuta, K. Inokuchi, Y. Sano, 1988 .

The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method

Yoshiaki Sano, Takashi Egawa, Katsuzo Kaminishi, 1985 .

Annealing technology under arsenic overpressure for GaAs LSI–influence on dislocation and threshold voltage

T. Egawa, K. Kaminishi, Y. Sano, 1988 .

Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation

T. Egawa, K. Kaminishi, Y. Sano, 1986 .

Influence of NH3-Plasma Pretreatment before Si3N4 Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs

Yoshiaki Sano, Masanori Itoh, Toshiharu Marui, 2006, IEICE Trans. Electron..