N. Amirifar

Reliability of p-GaN Gate HEMTs in Reverse Conduction

S. Decoutere, G. Groeseneken, K. Jacobs, 2021, IEEE Transactions on Electron Devices.

Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameters

X. Portier, P. Pareige, S. Hassani, 2015 .

Observation of Dynamic V_TH of p-GaN Gate HEMTs by Fast Sweeping Characterization

S. Decoutere, G. Groeseneken, N. Posthuma, 2020 .

Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization

S. Decoutere, G. Groeseneken, N. Posthuma, 2020, IEEE Electron Device Letters.

Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field

X. Portier, J. Eymery, J. Carlin, 2014 .

Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates

S. Decoutere, G. Groeseneken, D. Wellekens, 2020, IEEE Transactions on Semiconductor Manufacturing.

Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates

S. Decoutere, K. Geens, A. Magnani, 2021 .

Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates

S. Decoutere, K. Geens, Xiangdong Li, 2020, 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

S. Decoutere, D. Wellekens, B. Bakeroot, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).