S. Lenci

发表

Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

Dirk Wellekens, Stefaan Decoutere, Brice De Jaeger, 2013, IEEE Electron Device Letters.

Stiction-free poly-SiGe resonators for monolithic integration of biosensors with CMOS

S. Decoutere, J. de Coster, L. Haspeslagh, 2011, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference.

Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance

S. Decoutere, I. De Wolf, R. Mertens, 2011, 2011 International Electron Devices Meeting.

Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

S. Decoutere, G. Groeseneken, N. Ronchi, 2015 .

Improvement of the dynamic characteristics of Au-free AlGaN/GaN Schottky Diodes on 200 mm Si wafers by surface treatments

S. Decoutere, N. Ronchi, M. Van Hove, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

S. Decoutere, A. Tallarico, G. Groeseneken, 2016, IEEE Transactions on Electron Devices.

AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate

S. Decoutere, N. Ronchi, S. Lenci, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers

S. Decoutere, G. Groeseneken, N. Ronchi, 2016 .

ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence

S. Decoutere, A. Tallarico, C. Fiegna, 2016, IEEE Transactions on Electron Devices.

On the Identification of Buffer Trapping for Bias-Dependent Dynamic $R_{\mathrm{\scriptscriptstyle ON}}$ of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier

S. Decoutere, G. Groeseneken, S. Stoffels, 2016, IEEE Electron Device Letters.

Reliability of Au-Free AlGaN/GaN-on-Silicon Schottky Barrier Diodes Under ON-State Stress

S. Decoutere, A. Tallarico, C. Fiegna, 2016, IEEE Transactions on Electron Devices.

Suspended AlGaN/GaN membrane devices with recessed open gate areas for ultra-low-power air quality monitoring

S. Decoutere, P. Offermans, M. Van Hove, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Micro-Opto-Mechanical Pressure , Sound , and Ultrasound Sensors in Silicon-Nitride Photonic Technology

J. O'Callaghan, V. Rochus, F. Verhaegen, 2019 .

UV lithography-based protein patterning on silicon: Towards the integration of bioactive surfaces and CMOS electronics

C. Domenici, F. Pieri, S. Lenci, 2011 .

GAN-on-Si HEMTs for 50V RF applications

S. Decoutere, F. Vanaverbeke, R. Venegas, 2012, 2012 7th European Microwave Integrated Circuit Conference.

Evaluation of the Electrical Properties, Piezoresistivity and Noise of poly-SiGe for MEMS-above-CMOS applications

K. Meyer, L. Haspeslagh, A. Witvrouw, 2009 .

Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence

S. Decoutere, A. Tallarico, C. Fiegna, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

Denis Marcon, Stefaan Decoutere, Xuanwu Kang, 2012, Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Silicon nitride photonic platform for sensing applications

A. Firrincieli, P. Hélin, N. Pham, 2019, International Conference on Optical MEMS and Nanophotonics.

A Versatile LPCVD Silicon Nitride Platform For Heterogenous Photonic Circuits: Ultra Tight Thickness Control And Low Propagation Loss

A. Ray Chaudhuri, A. Firrincieli, Ph. Helin, 2019, 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC).

Double MZI Micro-Opto-Mechanical Pressure Sensors for increased sensitivity and pressure range

P. Merken, V. Rochus, F. Verhaegen, 2017, 2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS).

Protein patterning on polycrystalline silicon–germanium via standard UV lithography for bioMEMS applications

C. Domenici, S. Severi, A. Nannini, 2010 .

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2016, IEEE Transactions on Electron Devices.

Broadband and Temperature Tolerant Silicon Nitride Liquid Controlled Waveguide Coupler

C. L. Arce, D. van Thourhout, K. Saurav, 2019, Journal of Lightwave Technology.

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal

Denis Marcon, Gustaaf Borghs, Marleen Van Hove, 2011, IEEE Electron Device Letters.

Au-free , High-Breakdown AlGaN / GaN MISHEMTs with Low Leakage , High Yield and Robust TDDB Characteristics

S. Decoutere, M. V. Hove, D. Wellekens, 2011 .

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

Guido Groeseneken, Stefaan Decoutere, Brice De Jaeger, 2014 .

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Guido Groeseneken, Stefaan Decoutere, Benoit Bakeroot, 2015 .