Jie Hu

发表

Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

Dirk Wellekens, Stefaan Decoutere, Brice De Jaeger, 2013, IEEE Electron Device Letters.

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Daniel Piedra, Xiang Gao, Tomás Palacios, 2017, IEEE Electron Device Letters.

Materials and processing issues in vertical GaN power electronics

Daniel Piedra, Nadim Chowdhury, Tomas Palacios, 2017 .

Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

S. Decoutere, G. Groeseneken, N. Ronchi, 2015 .

Improvement of the dynamic characteristics of Au-free AlGaN/GaN Schottky Diodes on 200 mm Si wafers by surface treatments

S. Decoutere, N. Ronchi, M. Van Hove, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

S. Decoutere, A. Tallarico, G. Groeseneken, 2016, IEEE Transactions on Electron Devices.

AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate

S. Decoutere, N. Ronchi, S. Lenci, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers

S. Decoutere, G. Groeseneken, N. Ronchi, 2016 .

ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence

S. Decoutere, A. Tallarico, C. Fiegna, 2016, IEEE Transactions on Electron Devices.

On the Identification of Buffer Trapping for Bias-Dependent Dynamic $R_{\mathrm{\scriptscriptstyle ON}}$ of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier

S. Decoutere, G. Groeseneken, S. Stoffels, 2016, IEEE Electron Device Letters.

Reliability of Au-Free AlGaN/GaN-on-Silicon Schottky Barrier Diodes Under ON-State Stress

S. Decoutere, A. Tallarico, C. Fiegna, 2016, IEEE Transactions on Electron Devices.

The electronic structures and optical gain of dilute nitride GaAs nanowires under uniaxial stress

Jie Hu, Wen Xiong, Jian-Wei Wang, 2019, Applied Physics Express.

Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence

S. Decoutere, A. Tallarico, C. Fiegna, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

S. Decoutere, N. Ronchi, S. Stoffels, 2016, 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).

Trench formation and corner rounding in vertical GaN power devices

Daniel Piedra, Xiang Gao, Tomas Palacios, 2017 .

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2016, IEEE Transactions on Electron Devices.

Optical response of Te-based monolayer materials from first principles

Jianwei Wang, C. Cai, Jie Hu, 2019, Applied Physics Letters.

The large photoresponse and high polarization sensitivity of Te-based optoelectronic devices with the adsorbed hydroxide ions

Pu Huang, Jie Hu, Fei Wang, 2021 .

Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests

Guido Groeseneken, Ben Kaczer, Denis Marcon, 2017, IEEE Electron Device Letters.

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Stefaan Decoutere, Benoit Bakeroot, Steve Stoffels, 2014 .

Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates

S. Decoutere, B. de Jaeger, N. Ronchi, 2015 .

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

Guido Groeseneken, Stefaan Decoutere, Brice De Jaeger, 2014 .

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Guido Groeseneken, Stefaan Decoutere, Benoit Bakeroot, 2015 .

First-principles study on strain-modulated negative differential resistance effect of in-plane device based on heterostructure tellurene

Pu Huang, Jianwei Wang, C. Cai, 2020 .