Mengtian Bao

An Improved VCE–EOFF Tradeoff and Snapback-Free RC-IGBT With P⁺ Pillars

Ying Wang, Cheng-Hao Yu, Fei Cao, 2020, IEEE Transactions on Electron Devices.

Analysis of radiation effect of a novel SOI-Like LDMOS structure

Ying Wang, Cheng-Hao Yu, Fei Cao, 2022, Microelectronics Reliability.

Graded-channel junctionless dual-gate MOSFETs for radiation tolerance

Jianqun Yang, Chaoming Liu, Ying Wang, 2017 .

Single-Event Burnout Hardness for the 4H-SiC Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer

Jianqun Yang, Ying Wang, Cheng-Hao Yu, 2019, IEEE Transactions on Electron Devices.

Super junction LDMOS with P-trench and stepped buried oxide layer for high performance

Ying Wang, Cheng-Hao Yu, Fei Cao, 2019, Superlattices and Microstructures.

Research of single-event burnout and hardened GaN MISFET with embedded PN junction

Xingji Li, Ying Wang, Xin Luo, 2020 .

TCAD simulation of a breakdown-enhanced double channel GaN metal–insulator–semiconductor field-effect transistor with a P-buried layer

Ying Wang, Xin Luo, Xin-Xing Fei, 2020 .