A. Kinoshita

发表

Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature

K. Fukuda, N. Iwamuro, Hiroshi Kimura, 2012 .

Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs

K. Fukuda, T. Yatsuo, T. Hatakeyama, 2010 .

High Performance SiC IEMOSFET/SBD Module

K. Fukuda, S. Harada, N. Iwamuro, 2012 .

Effect of Fe impurity on the dislocations in 4H-SiC: Insights from electrical and optical characterization

Bin Chen, T. Sekiguchi, H. Okumura, 2014 .

Characterization of the buried interface in a Ni (film)/3C-SiC (substrate) system using SXES

A. Kinoshita, M. Iwami, M. Hirai, 2000 .

Pinning of recombination-enhanced dislocation motion in 4H–SiC: Role of Cu and EH1 complex

Bin Chen, T. Sekiguchi, H. Okumura, 2010 .

Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC

Bin Chen, T. Sekiguchi, H. Okumura, 2012 .

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Bin Chen, T. Sekiguchi, Jun Chen, 2010, Journal of Electronic Materials.

Electron-beam-induced current and cathodoluminescence study of dislocation arrays in 4H-SiC homoepitaxial layers

Bin Chen, T. Sekiguchi, H. Okumura, 2009 .

Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry

H. Yamaguchi, H. Matsuhata, I. Nagai, 2008 .

Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode

Bin Chen, T. Sekiguchi, Jun Chen, 2008 .

Electron-beam-induced current study of electrical activity of dislocations in 4H–SiC homoeptaxial film

T. Sekiguchi, Jun Chen, H. Okumura, 2008 .

Evaluation of AlGaN/GaN-HFET with HfAlO gate insulator

M. Shimizu, H. Okumura, A. Kinoshita, 2007 .

Photoemission study of 6H-SiC(0001)Si face

T. Tsukamoto, T. Nakata, A. Kinoshita, 1997 .

1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage

S. Harada, H. Shiomi, H. Kitai, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Radiation effect on pn-SiC diode as a detector

T. Kamiya, T. Ohshima, R. Tanaka, 2005 .

Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment

K. Fukuda, S. Harada, J. Senzaki, 2006 .

Activation of p-Type Dopants in 4H–SiC Using Hybrid Super-Rapid Thermal Annealing Equipment

Kenji Suzuki, K. Fukuda, S. Harada, 2007 .

Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing

K. Fukuda, K. Kojima, K. Arai, 2006 .

Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height

K. Fukuda, T. Yatsuo, H. Okumura, 2010 .

Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing

Kenji Fukuda, Tsutomu Yatsuo, Akimasa Kinoshita, 2007 .

Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode

K. Fukuda, T. Yatsuo, H. Okumura, 2008 .

Evaluation of Schottky barrier height on 4H-SiC m-face for Schottky barrier diode wall integrated trench MOSFET

S. Harada, T. Kojima, M. Takei, 2017 .

Evidence for a general mechanism modulating carrier lifetime in SiC

Bin Chen, T. Sekiguchi, H. Okumura, 2010 .

Characterization of charge generated in silicon carbide n + p diodes using transient ion beam-induced current

Akimasa Kinoshita, I. Nakano, Takeshi Yamakawa, 2005 .

Electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial films

Bin Chen, T. Sekiguchi, Jun Chen, 2009 .

Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC

H. Yamaguchi, H. Matsuhata, I. Nagai, 2008 .