C. Lai

A 3.1 - 10.6 GHz CMOS Low-Voltage Mixer with Active Balun Designed for UWB Systems

Jeng-Rern Yang, C. Lai, 2012 .

RF MIM capacitors using high-K Al/sub 2/O/sub 3/ and AlTiO/sub x/ dielectrics

A. Chin, J. C. Hsieh, J. Liu, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

A novel program-erasable high-/spl kappa/ AlN-Si MIS capacitor

S. McAlister, A. Chin, M. Li, 2005, IEEE Electron Device Letters.

A novel program-erasable high-k AlN capacitor with memory function

D. Kwong, Ming-Fu Li, S. McAlister, 2004, Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference.

Formation of Ni germano-silicide on single crystalline Si/sub 0.3/Ge/sub 0.7//Si

A. Chin, J. Liu, C. Lai, 2002, IEEE Electron Device Letters.

High-density MIM capacitors using Al2O3 and AlTiOx dielectrics

J. Liu, J.C. Hsieh, A. Chin, 2002, IEEE Electron Device Letters.

Very Low Voltage SiO2/HfON/HfAlO/TaN Memory with Fast Speed and Good Retention

A. Chin, C.H. Lai, C.C. Chi, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Novel SiO/sub 2//AlN/HfAIO/IrO/sub 2/ memory with fast erase, large /spl Delta/V/sub th/ and good retention

K.C. Chiang, S.P. McAlister, A. Chin, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range

A. Chin, J. C. Hsieh, J. Liu, 2002, IEEE Electron Device Letters.