P. Becker

Stress-induced formation of high-density amorphous carbon thin films

Sven Ulrich, S. R. P. Silva, S. Ulrich, 1997 .

Strong 1.54 μm luminescence from erbium-doped porous silicon

Hans Oechsner, N. V. Gaponenko, V. E. Borisenko, 1996 .

Carrier confinement in GaN/Al x Ga 1-x N nanowire heterostructures (0

J. Arbiol, A. Chernikov, J. R. Morante, 2011, 1109.3394.